1 high speed cmos logic ic ELM7SH08XB 2 - input and gate g e neral description f eatures applica tion selection guide elm7sh 0 8 x b- el symbol a function 0 8 : 2-input and gate b package m : sot - 25 t : ssot - 25(sc - 88a) c product version b d taping d irection el : ref er to pkg file maximum a bsolute ratings parameter symbol limit unit power supply voltage vdd - 0.5 + 6 .0 v input voltage vin - 0.5 + 6.0 v output voltage vout - 0.5 vdd + 0.5 v input protection diode current iik - 20 ma output parasitic diode current iok 20 ma output current iout 25 ma v dd /gnd current i dd , ig nd 50 ma power dissipation pd 150 mw storage temperature tstg - 65 + 150 ELM7SH08XB is cmos 2-input and gate which is suitable for battery-operated devices because of its low voltage and ultra high speed operation. the low power consumption contributes to longer battery life, which allows long time operation of devices. the internal circuit which provides high noise immunity and stable output is composed of 4 stages, including buffered output. ? same electrical characteristic and high speed operation as 74vhc series ? low consumption current idd=1.0 a(max.)(top=25 ) ? wide power voltage range 2.0v 5.5v ? wide input voltage range : vih=5.5v (max.)(vdd=0 5.5v) ? high speed tpd=2ns(typ.) (vdd=5.0v) ? small p ackage : sot - 25, ssot - 25(sc-88a) ? same function and pin con?guration as elm7sxxb ? cell phones ? digital cameras ? portable electrical appliances like pda, etc. ? computers and peripherals ? digital electrical appliances like lcd tv sets, dvd recorders/players, stb, etc. ? modi?cation inside print board, adjustment of timing, solution to noise ? power voltage change from 5v to 3v elm7sh 0 8 x b - el a b c d
2 pin no. pin name 1 inb 2 ina 3 gnd 4 outx 5 v dd high speed cmos logic ic ELM7SH08XB 2 - input and gate pin con?guration top view dc e l ectrical characteristics s uggested operating condition parameter symbol limit unit power voltage vdd 2. 0 5.5 v input voltage vin 0 5.5 v output voltage vout 0 vdd v operating temperature top - 40 + 85 high - input down -time tr, tf vdd = 3.3 0.3v 0 2 00 ns vdd = 5 . 0 0.5v 0 1 00 parameter sym. vdd top=25 top=-40 + 85 unit condition min. typ. max. min. max. input voltage vih 2.0 1.50 1.50 v 3.0 2.10 2.10 5.5 3.85 3.85 vil 2.0 0.50 0.50 v 3.0 0.90 0.90 5.5 1.65 1.65 output voltage voh 2.0 1.90 2.00 1.90 v vin =vih ioh = - 50 a 3.0 2.90 3.00 2.90 4.5 4.40 4.50 4.40 3.0 2.58 2.48 ioh = - 4 ma 4.5 3.94 3.80 ioh = - 8 ma vol 2.0 0.10 0.10 v vin =vil or vih iol = 5 0 a 3.0 0.10 0.10 4.5 0.10 0.10 3.0 0.36 0.44 iol = 4 ma 4.5 0.36 0.44 iol = 8 ma input current iin 5.5 - 0.1 0.1 - 1.0 1.0 a vin =vdd or gnd static current idd 5.5 1.0 10.0 a vin =vdd or gnd input output ina inb outx low low low low high low high low low high high high
3 * cpd is ic's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit. averaged operating current consumption at non load is cal culated as following formula: idd (opr) =cpd ?vdd ?fin + idd high speed cmos logic ic ELM7SH08XB 2 - input and gate a c e l ectrical characteristics test c ircuit measured wave pattern marking * o utput should be ope ned when measuring current consumption. tr = tf =3ns sot - 25 no. mark content f elm7sh series 2 ELM7SH08XB a z ( except i, o, x ) lot no. ssot - 25 parameter sym. vdd cl top=25 t op=-40 + 85 unit condition min. typ. max. min. max. propagation delay-time tplh 3.3 0.3 15 3.7 8.8 1.0 10 .5 ns refer to test circuit tphl 3.2 8.8 1.0 10 .5 tplh 3.3 0.3 50 5.2 12.3 1.0 14.0 tphl 4.5 12.3 1.0 14.0 tplh 5 . 0 0.5 15 2.8 5.9 1.0 7.0 tphl 2.4 5.9 1.0 7.0 tplh 5. 0 0.5 50 3.7 7.9 1.0 9.0 tphl 3.4 7.9 1.0 9.0 input capacity cin 5.0 4.0 10.0 10.0 pf vin = vdd or gnd equivalent inner capacity cpd 9.3 pf f =1mhz ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?
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